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IXGH 40N120A2 IXGT 40N120A2
High Voltage IGBT
Low VCE(sat)
Preliminary Data Sheet
IXGH 40N120A2 IXGT 40N120A2
VCES = 1200 V IC25 = 75 A VCE(sat) 2.0 V
Symbol VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C, IGBT chip capability TC = 110C TJ 150C, tp < 300 s VGE = 15 V, TVJ = 150C, RG = 5 Clamped inductive load, VCE < 960 V TC = 25C
Maximum Ratings 1200 1200 20 30 75 40 160 ICM = 80 360 -55 ... +150 150 -55 ... +150 V V V V
G C
TO-247 (IXFH)
A A A A
E
(TAB)
TO-268 (IXGT)
W C C C C C Nm/lb.in. g g
Features
G G = Gate E = Emitter E C (TAB)
C = Collector TAb = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds Mounting torque (ixgh) (IXGH) (IXGT)
300 260 1.3/10 6.0 4.0
* International standard packages * Low VCE(sat)
- for minimum on-state conduction
*
Symbol Test Conditions (TJ = 25C unless otherwise specified) VGE(th) VGE(th) ICES IGES VCE(sat) IC = 1 mA, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15V TJ = 125C Characteristic Values Min. Typ. Max. 1200 3.0 V 5.0 V 50 A 1mA 100 nA 2.0 V
losses MOS Gate turn-on - drive simplicity
Applications
* * * * * *
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge
(c) 2005 IXYS All rights reserved
DS99509 (12/05)
IXGH 40N120A2 IXGT 40N120A2
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) 0.25 Note 1: Pulse test, t 300 s, duty cycle 2 % Inductive load, TJ = 125C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = 2 Inductive load, TJ = 25C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = 2 IC = IC110, VGE = 15 V, VCE = 0.5 VCES IC = IC110, VCE = 10 V VGE = 10 V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz Characteristic Values Min. Typ. Max. 28 40 195 3150 165 70 136 19 54 22 41 420 800 15 19 36 3.5 730 1570 35 800 1200 25 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.35 K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline (IXGT)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
TO-268: Min. Recommended Footprint
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXGH 40N120A2 IXGT 40N120A2
Fig. 1. Output Characteristics @ 25C
80 70 60 210 50 40 7V 30 20 60 10 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 30 0 0 2 4 6 8 10 12 14 16 18 20 7V 9V 11V VGE = 15V 13V 11V 300 270 240 VGE = 15V 13V
Fig. 2. Exteded Output Characteristics @ 25C
IC - Amperes
IC - Amperes
180 150 9V 120 90
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
80 70 60 VGE = 15V 13V 11V 1.6 1.5 1.4 9V 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 7V
Fig. 4. Dependence of VCE(sat) on Junction Temperature
V GE = 15V
VCE(sat) - Normalized
I C = 80A
IC - Amperes
1.3 1.2 1.1 1.0 0.9 I C = 20A I C = 40A
5V
0.8 0.7 -50 -25 0 25 50 75 100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 5 6 7 8 9 10 11 12 13 14 15 I C = 80A 40A 20A TJ = 25C 200 180 160 140
Fig. 6. Input Admittance
TJ = - 40C 25C 125C
IC - Amperes
VCE - Volts
120 100 80 60 40 20 0 4.5 5.5 6.5 7.5 8.5 9.5 10.5
VGE - Volts
VGE - Volts
(c) 2005 IXYS All rights reserved
IXGH 40N120A2 IXGT 40N120A2
Fig. 7. Transconductance
55 50 45 1900
Fig. 8. Inductive Turn-off Switching Times vs. Gate Resistance
2000
tf
I C = 20A, 80A VCE = 960V
td(off) - - - -
1100 1000
TJ = 125C, VGE = 15V
35 30 25 20 15 10 5 0 0 30 60 90 120 150 180 210 TJ = - 40C 25C 125C
t f - Nanoseconds
40
t d(off) - Nanoseconds
1800 1700 I C = 40A 1600 1500
900 800 700 600
g f s - Siemens
I C = 20A, 80A
1400 1300 2 3 4 5 6 7 8 9 10
500 400
IC - Amperes
RG - Ohms
Fig. 9. Inductive Turn-off Switching Times vs. Collector Current
2000 1800 TJ = 125C 1600 1400 1200 1000 800 600 20 30 40 50 60 70 80 1000 900
Fig. 10. Inductive Turn-off Switching Times vs. Junction Temperature
2000 1000
tf
1800 VCE = 960V
td(off) - - - 900
RG = 2 , VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
RG = 2 , VGE = 15V VCE = 960V 700 600 500 400 300
t f - Nanoseconds
tf
td(off) - - - -
800
t d(off) - Nanoseconds
1600 1400 1200 1000 800 600 25 35 45 55 65 75 85 95 105 115 I C = 80A, 20A I C = 20A, 40A, 80A
800 700 600 500 400 300 125
TJ = 25C
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Inductive Turn-on Switching Times vs. Gate Resistance
150
Fig. 12. Inductive Turn-on Switching Times vs. Collector Current
100 25
tr
135 120 VCE = 960V
td(on) - - - -
65 60 55
tr
90 80 VCE = 960V
td(on) - - - 24 23 22 21
TJ = 125C, VGE = 15V
RG = 2 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
105 90 75 60 45 30 15 0 2 3 4 5 6
I C = 80A
50 45 40
70 60 TJ = 25C 50 40 30 20 10 20 30 40 50 60 70 80
I C = 40A
20 19 18 17 16
35 30
I C = 20A
25 20 15
TJ = 125C
7
8
9
10
RG - Ohms
I C - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH 40N120A2 IXGT 40N120A2
Fig. 13. Inductive Turn-on Switching Times vs. Junction Temperature
110 100 90 I C = 80A 25 24 23 16 14 12 V CE = 600V I C = 40A I G = 10 mA
Fig. 14. Gate Charge
t r - Nanoseconds
80 70 60 50 40 30 20 I C = 20A 10 25 35 45 55 65 75 I C = 40A
tr
VCE = 960V
td(on) - - - -
t d(on) - Nanoseconds
22 21 20 19 18 17 16 15 125
VGE - Volts
RG = 2 , VGE = 15V
10 8 6 4 2 0 0 20 40 60 80 100 120 140
85
95
105
115
TJ - Degrees Centigrade
QG - NanoCoulombs
Fig. 15. Capacitance
10,000 f = 1 MHz 80 90
Fig. 16. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
C ies
70
IC - Amperes
1,000
60 50 40 30
C oes 100 C res
20 10
TJ = 125C RG = 5 dV / dT < 10V / ns
10 0 5 10 15 20 25 30 35 40
0 200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
1.00
R(th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2005 IXYS All rights reserved

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